| PART |
Description |
Maker |
| MIC45208 |
26V 10A DC-to-DC Power Module
|
Micrel Semiconductor
|
| HGT1S14N37G3VLS HGTP14N37G3VL |
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs)
|
Intersil Corporation
|
| STB15NM60N STI15NM60N STP15NM60N STF/I15NM60N STF1 |
N-channel 600V - 0.270ヘ - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.270楼? - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET
|
STMicroelectronics
|
| BUZ71 |
14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFET
RP30 (EW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 12V; 4:1 Wide Input Voltage Range; 30 Watts
14A, 50V, 0.100 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| IRFR12N25DPBF IRFU12N25DPBF IRFR13N20DTRPBF |
High frequency DC-DC converters
HEXFET Power MOSFET ( VDSS = 250V , RDS(on)max = 0.26ヘ , ID = 14A )
HEXFET Power MOSFET ( VDSS = 250V , RDS(on)max = 0.26Ω , ID = 14A )
|
International Rectifier
|
| MAPLST0810-090CF MAPLST0810-090CF-05-2004 |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
|
MACOM[Tyco Electronics]
|
| MAPLST1820-060CF |
RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 60W, 26V
|
Tyco Electronics
|
| IRFY1310M-T257 |
N-Channel Power MOSFET For HI-REL Application(Vds:100V,Id(max):14A,Rds(on):0.055Ω)(N沟道功率MOS场效应管,HI-REL应用(Vds:100V,Id(max):14A,Rds(on):0.055Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| 14N50 14N50L-TQ2-T 14N50G-TQ2-R 14N50G-TQ2-T 14N50 |
14A, 500V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| IRF644S |
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)
|
IRF[International Rectifier]
|
